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     Advance Journal of Food Science and Technology

    Abstract
2015(Vol.9, Issue:4)
Article Information:

Physico-chemical and Antioxidant Properties of Different Pumpkin Cultivars Grown in China

Jing Zhao, Wei Liu, Dong Chen, Yi Song, Yuyu Zhang, Yuanying Ni and Quanhong Li
Corresponding Author:  Quanhong Li 
Submitted: March ‎7, ‎2015
Accepted: April ‎1, ‎2015
Published: August 15, 2015
Abstract:
: To obtain more detailed knowledge of the differences among major pumpkin species grown in China, physico-chemical and antioxidant properties of four pumpkin cultivars (Miben, Hongli, Lvli, Xihulu) were characterized and compared. Dry matter, total soluble solids, titratable acidity, fruit color, protein, fat, sugars, minerals, amino acids, &beta -carotene, L-ascorbic acid, total phenols and antioxidant activities (DPPH and FRAP) were measured in the studied cultivars. The results showed great differences in the composition and characteristics of the pumpkin cultivars. Miben exhibited the highest concentration of dry matter, fat, Total Soluble Solid (TSS), Titratable Acidity (TA), sucrose, &beta-carotene, K, P, Fe, Zn and aspartic acid. Hongli had the highest concentration protein, L-ascorbic acid, Na, Ca, Mg and all individual amino acids except for asparitic acid. Lvli exhibited significantly (p<0.05) higher antioxidant activities (DPPH and FRAP), which are highly related to total phenols content in pumpkin fruits (r = 0.94 and r = 0.98, respectively). Principal Component Analysis (PCA) allowed the four pumpkin cultivars to be differentiated clearly based on all these physico-chemical and antioxidant properties determined in the study.

Key words:  Antioxidant properties, cultivars, physico-chemical, principle component analysis, pumpkin, ,
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Cite this Reference:
Jing Zhao, Wei Liu, Dong Chen, Yi Song, Yuyu Zhang, Yuanying Ni and Quanhong Li , . Physico-chemical and Antioxidant Properties of Different Pumpkin Cultivars Grown in China. Advance Journal of Food Science and Technology, (4): 308-316.
ISSN (Online):  2042-4876
ISSN (Print):   2042-4868
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