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    Abstract
2012 (Vol. 4, Issue: 01)
Article Information:

Modeling Study of N+/P Solar Cell Resistances from Single I-V Characteristic Curve Considering the Junction Recombination Velocity (Sf)

S. Mbodji, I. Ly, H. L. Diallo, M.M. Dione, O. Diasse and G. Sissoko
Corresponding Author:  Senghane MBODJI 

Key words:  Grain boundary recombination velocity, grain size, junction recombination velocity, series resistance, shunt resistance, ,
Vol. 4 , (01): 1-7
Submitted Accepted Published
2011 August, 10 2011 September, 25 2012 January, 01
Abstract:

This study presents a new technic based on the junction recombination velocity (Sf) for the evaluation of the series and shunt resistances. Associating Sf and Sb, the back surface recombination velocity, we resolved the continuity equation in the base of the solar cell under monochromatic illumination and plotted I-V and P-V curves. Using single I-V curve, two equivalent electric circuits of the solar are proposed and lead to expressions of Rs and Rsh. Computations of Rs and Rsh and comparison with published data are given.
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  Cite this Reference:
S. Mbodji, I. Ly, H. L. Diallo, M.M. Dione, O. Diasse and G. Sissoko, 2012. Modeling Study of N+/P Solar Cell Resistances from Single I-V Characteristic Curve Considering the Junction Recombination Velocity (Sf).  Research Journal of Applied Sciences, Engineering and Technology, 4(01): 1-7.
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ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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