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2012 (Vol. 4, Issue: 16)
Article Information:

Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell

H. Ly Diallo, B. Dieng, I. Ly, M.M. Dione, M. Ndiaye, O.H. Lemrabott, Z.N. Bako, A. Wereme and G. Sissoko
Corresponding Author:  G. Sissoko 

Key words:  Electrical parameter, recombination parameter, vertical junction, , , ,
Vol. 4 , (16): 2626-2631
Submitted Accepted Published
November 10, 2011 December 09, 2011 August 15, 2012
Abstract:

A theoretical study of a vertical parallel junction under constant multispectral light has been made. By using a new approach of the carrier generation rate we determine the recombination and electrical parameters. The photocurrent density JPH is presented as a calibrated function, diffusion length dependent. It intercepts with the experimental short circuit current density JSC, at the minority carriers diffusion length L value. The photo voltage as a calibrated function of surface recombination velocity intercepts the experimental open circuit voltage at the junction intrinsic recombination velocity. The shunt and series resistances are presented respectively as a calibrated function of the surface recombination velocity and it intercepts with the value of junction recombination velocity in short circuit SFSC or in open circuit SFOC at the experimental shunt and series resistances value.
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  Cite this Reference:
H. Ly Diallo, B. Dieng, I. Ly, M.M. Dione, M. Ndiaye, O.H. Lemrabott, Z.N. Bako, A. Wereme and G. Sissoko, 2012. Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar Cell.  Research Journal of Applied Sciences, Engineering and Technology, 4(16): 2626-2631.
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