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    Abstract
2012 (Vol. 4, Issue: 22)
Article Information:

Electric Equivalent Models of Intrinsic Recombination Velocities of a Bifacial Silicon Solar Cell under Frequency Modulation and Magnetic Field Effect

Nd. Thiam, A. Diao, M. Ndiaye, A. Dieng, A. Thiam, M. Sarr, A.S. Maiga and G. Sissoko
Corresponding Author:  Nd. Thiam 

Key words:  Frequency modulation, magnetic field, recombination velocity, silicon solar cell, , ,
Vol. 4 , (22): 4646-4655
Submitted Accepted Published
March 19, 2012 April 20, 2012 November 15, 2012
Abstract:

In this study, we present a theoretical study of the photogenerated charge carriers in the base of an illuminated n+-p-p+ crystalline silicon solar cell under an external magnetic field. By solving the charge carriers’ continuity equation, the dependence of diffusion coefficient and the photocurrent density on the frequency modulation and magnetic field, is studied. Hence, the study of intrinsic recombination velocities at the junction Sfo1 and rear side Sbo1 of the solar cell, leads to electric equivalent models.
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  Cite this Reference:
Nd. Thiam, A. Diao, M. Ndiaye, A. Dieng, A. Thiam, M. Sarr, A.S. Maiga and G. Sissoko, 2012. Electric Equivalent Models of Intrinsic Recombination Velocities of a Bifacial Silicon Solar Cell under Frequency Modulation and Magnetic Field Effect.  Research Journal of Applied Sciences, Engineering and Technology, 4(22): 4646-4655.
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ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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