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Abstract
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Article Information:
Comparative Study of 1.3 and 1.5 μm Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots
O.A. Niasse, B. Ba, A. Ndiaye, F. Mbaye, A. Lo, A. Bèye and O. Tottereau
Corresponding Author: Oumar A. NIASSE
Submitted: December 20, 2011
Accepted: June 08, 2012
Published: January 01, 2013 |
Abstract:
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This study presents self-assembled quantum dots structures made on GaAs substrate. The samples were
grown by Molecular Beam Epitaxy (MBE) in the Stranski-Krastanow (SK) growth mode. Two types of quantum
dots structures are performed under different growth conditions and are compared: the first type is composed of two
structures with InAs quantum dots encapsulated with (Ga, In) (N, As) and the second one with boxes wrapped with
InGaAs. The influence of encapsulation of quantum dots is highlighted and as already shown, the redshift of
emission wavelength depends on nitrogen doping. Further investigations are done through the incorporation of
indium and nitrogen in the quantum dots structures in order to understand their optimal doping level on electrical
and optical properties. The effects of temperature, an important growth parameter, are examined through images of
nanostructures obtained by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM)
techniques.
Key words: Dislocations, epitaxy, Molecular Beam Epitaxy (MBE), photoluminescence, quantum dots, RHEED, Scanning Electronic Microscopy (SEM)
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Cite this Reference:
O.A. Niasse, B. Ba, A. Ndiaye, F. Mbaye, A. Lo, A. Bèye and O. Tottereau, . Comparative Study of 1.3 and 1.5 μm Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots. Research Journal of Applied Sciences, Engineering and Technology, (01): 30-36.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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