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2013 (Vol. 5, Issue: 02)
Article Information:

Study of Static Dielectric Constant of n-Type InAs

M.A. Alzamil
Corresponding Author:  M.A. Alzamil 

Key words:  Heavily doped InAs, polarization catastrophe, static dielectric constant, , , ,
Vol. 5 , (02): 481-484
Submitted Accepted Published
May 08, 2012 June 08, 2012 January 11, 2013

The aim of this study is studying the influence of the donor concentration and temperature on the static dielectric constant (&epsilonS) of heavily doped n-type InAs semiconductor. The variation of donor concentration caused an exponential increase of &epsilonS at high values of donor density. Our calculations indicated that &epsilonS Our calculations indicated that &epsilonS has no meaning at concentration above 31016 cm3. Above this value the static dielectric constant diverges so that the polarization catastrophe occurred. The static dielectric constant dependence of resistivity shows that at high resistivity the static dielectric constant appears to be nearly constant and equals the value &epsilonS = 14.5. This value is equal to the static dielectric constant of InAs host semiconductor without doping. One can expect a divergence &epsilonS at very low resistivity values at which polarization catastrophe can happen.
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  Cite this Reference:
M.A. Alzamil, 2013. Study of Static Dielectric Constant of n-Type InAs.  Research Journal of Applied Sciences, Engineering and Technology, 5(02): 481-484.
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ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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