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2013 (Vol. 5, Issue: 06)
Article Information:

Comparing AlGaAs-GaAs Heterojunction Materials with CdS-InP Anisotype for Solar Cells Efficiency in Concentrator Systems

Tina Sojoudi, Nardin Avishan, Sanam Khalili, Mohammad Karimi and Ronak Khosravi
Corresponding Author:  Tina Sojoudi 

Key words:  Anis type, efficiency, hetero face, hetero junctions, solar cells , ,
Vol. 5 , (06): 1923-1927
Submitted Accepted Published
June 08, 2012 August 08, 2012 February 21, 2013
Abstract:

In this study, a research was conducted for comparisons between Hetero Junction (HJ) solar cells and anis type materials. The material Al0.25Ga0.75 As /GaAs is discussed as an example of such a structure and on the other hand the Cd0.25 S0.75 -InP anis type as an example of the solar cells is considered as an example of an anis type in which the properties of low lattice mismatch appear as an advantageous for junction transport. Finally all common junctions are experimented and results show the best efficiency for each with real amounts.
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  Cite this Reference:
Tina Sojoudi, Nardin Avishan, Sanam Khalili, Mohammad Karimi and Ronak Khosravi, 2013. Comparing AlGaAs-GaAs Heterojunction Materials with CdS-InP Anisotype for Solar Cells Efficiency in Concentrator Systems.  Research Journal of Applied Sciences, Engineering and Technology, 5(06): 1923-1927.
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ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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