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2013 (Vol. 5, Issue: 08)
Article Information:

A Comparative Study on SOI MOSFETs for Low Power Applications

Khairul Affendi Rosli, Raja Mohd. Noor Hafizi Raja Daud, Md. Mamun and Mohammad Arif Sobhan Bhuiyan
Corresponding Author:  Mohammad Arif Sobhan Bhuiyan 

Key words:  FDSOI, Low power, MOSFET, PDSOI, SOI, ,
Vol. 5 , (08): 2586-2591
Submitted Accepted Published
August 09, 2012 September 03, 2012 March 15, 2013
Abstract:

Silicon on Insulator (SOI) technology has become one of the most promising technologies in semiconductor fabrication industry for its numerous advantages. This study presents merits and demerits of different SOIs presented in literatures and a comparative study is done based on several design and performance issues for low power applications. From the study it is found that Fully Depleted SOI MOSFET (FDSOI) technology is preferred due to its thin size, reduced leakage current and improved power consumption characteristics etc. compared to those of PDSOI and bulk silicon technology.
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  Cite this Reference:
Khairul Affendi Rosli, Raja Mohd. Noor Hafizi Raja Daud, Md. Mamun and Mohammad Arif Sobhan Bhuiyan, 2013. A Comparative Study on SOI MOSFETs for Low Power Applications.  Research Journal of Applied Sciences, Engineering and Technology, 5(08): 2586-2591.
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ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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