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    Abstract
2010 (Vol. 2, Issue: 2)
Article Information:

Analyze of Syncrotronic Radiation Spectrum due to Arrangement of Si (111) and Si (100) Substrates

F. Ashrafi, A. Bahari, S.A. Babanejad and Y. Massoumnia
Corresponding Author:  Fereydoun Ashrafi 

Key words:  Atomic arrangement, nano transistor, semi conductor, substrate, synchrotron radiation technique, thin film,
Vol. 2 , (2): Page No: 153-155
Submitted Accepted Published
2009 September, 30 2010 January, 10 2010 March, 10
Abstract:

In this research we have studied synchrotronical radiation spectrum of both Si (111) and Si (100) substrates by using 130 131 eV incoming photon energy. Difference in atomic arrangement of these two substrates orientations is obviously. Atomic arrangement in Si (111) is 77 but in Si (100) is 21. Consequently, Si (111) may be used as well Si (100) in nano transistors as a semi conductor device.
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  Cite this Reference:
F. Ashrafi, A. Bahari, S.A. Babanejad and Y. Massoumnia, 2010. Analyze of Syncrotronic Radiation Spectrum due to Arrangement of Si (111) and Si (100) Substrates.  Research Journal of Applied Sciences, Engineering and Technology, 2(2): Page No: 153-155.
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ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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