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2010 (Vol. 2, Issue: 6)
Article Information:

Study on Nano Silicon Oxide Growth in Argon Media

S.A. Babanejad, F. Ashrafi, A. Bahary and M. Norouzi
Corresponding Author:  Fereydoun Ashrafi 

Key words:  AES, Amorphous nano oxide, thin film, SEM technique, silicon oxide, ,
Vol. 2 , (6): Page No: 508-511
Submitted Accepted Published
2010 May, 19 2010 June, 14 2010 September, 10

When an ultra thin Silicon oxide film will been grown thermally on Si substrate, the clean oxide film could not be grown because of native oxide on the substrate and impurities such as carbon. Therefore some methods and experiments have been performed for grow ing SiO2 on Si (111) in presence and in absence of Ar gas at high pressure and high temperature. Experiments show that clean and amorphous nano oxide film could be formed at Ar media. Moreover, the film structures have been studied by using AES (Auger Electron Spectroscopy) and SEM (Scanning Electron Microscopy) techniques.
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  Cite this Reference:
S.A. Babanejad, F. Ashrafi, A. Bahary and M. Norouzi, 2010. Study on Nano Silicon Oxide Growth in Argon Media.  Research Journal of Applied Sciences, Engineering and Technology, 2(6): Page No: 508-511.
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ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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