|
Abstract
|
Article Information:
Structural and Luminescence Properties of SiGe Nanostructures with Ge Quantum Dots
F. Mofidnakhaei, C. Mohammadizadeh and N. Refahati
Corresponding Author: F. Mofidnakhaei
Submitted: September 07, 2014
Accepted: September 18, 2014
Published: September 20, 2014 |
Abstract:
|
A study of technological parameters of growing of SiGe like number of Ge nano layers, layers thickness and temperature of substrate are reported. These parameters play an important role in the optical properties of SiGe nanostructures with Ge quantum dots. A long lifetime of radiative recombination for band-to-band transition is attributed to indirect band in Si. As a consequence, the dominant recombination at deep level defects is non-radiative. In order to enhance the intensity of luminescence band at 0.8 eV that related to radiative recombination of Ge quantum dots, the hydrogen plasma ion treatment of SiGe nanostructure were utilized. Improving of the luminescence intensity is an important parameter to increase the quantum efficiency of optoelectronic devices based on the Si nano layer with Ge quantum dots.
Key words: Ge quantum dots (QD), internal strain, photoluminescence, SiGe nanostructure, , ,
|
|
Abstract
|
PDF
|
HTML |
|
Cite this Reference:
F. Mofidnakhaei, C. Mohammadizadeh and N. Refahati, . Structural and Luminescence Properties of SiGe Nanostructures with Ge Quantum Dots. Research Journal of Environmental and Earth Sciences, (9): 466-468.
|
|
|
|
 |
ISSN (Online): 2041-0492
ISSN (Print): 2041-0484 |
 |
| Information |
|
|
|
|
| Sales & Services |
|
|
|
|
