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     Advance Journal of Food Science and Technology


Effects of Sodium Silicate on Growth and Physiological Characteristics under Salt Stress in Dry-land Wheat Seedlings

Zhanli Hu and Yan Shi
Dryland-technology Key Laboratory of Shandong Province, Qingdao Agricultural University, Qingdao 266109, Shandong Province, China
Advance Journal of Food Science and Technology  2015  4:302-306
http://dx.doi.org/10.19026/ajfst.7.1313  |  © The Author(s) 2015
Received: September ‎07, ‎2014  |  Accepted: October ‎11, 2014  |  Published: February 05, 2015

Abstract

In order to find an appropriate Sodium Silicate (SS) application amount and improve the resistance to salt stress in dry-land wheat. The effects of SS on growth and physiological characteristics under 0.2% salt stress in dry-land wheat seedlings by applying different amounts of SS had been studied in the pots in the artificial climate chamber with the variety wheat Jimai22. The results indicated that, SS can increase root-shoot ratio, aboveground and underground fresh weight under 0.2% salt stress in dry-land wheat seedlings. Meanwhile, SS also could improve Superoxide dismutase (SOD), Peroxidase (POD) activity and reduce Malondialdehyde (MDA) content. In the SS amount range of 0~7.5 kg/667 m2, the SS application amount of 5 kg/667 m2 was the best to promote the growth of dry-land wheat seedlings under 0.2% salt stress.

Keywords:

Dry-land wheat seedlings, growth characteristics, protective enzymes actives, salt stress, sodium silicate,


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Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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The authors have no competing interests.

ISSN (Online):  2042-4876
ISSN (Print):   2042-4868
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