Abstract

The non-uniform turned-on and low holding-Voltage (V_h) issues are seriously impacted the reliability abilities of an n-channel lateral-diffused power MOSFET (nLDMOS). Therefore, basing on the drain Field-Oxide Device (FOD) structure of an nLDMOS and changing the thin-Oxide Definition (OD) topology for contacts located in the middle region of drain-side will be investigated in this study. The OD structure will renew as some dotted-OD manners. Experimental results show that the dotted-OD layout has a higher Electrostatic Discharge (ESD) capability than that of the FOD structure and the layout type of dotted-OD will affect the ESD capability of an HV component. A uniformly distributed type of dotted-OD will have a highest I_t2 value, the I_t2 value is increased about 12% as compared with the Ref. traditional nLDMOS. And, the V_h value will increase with the contacts number increasing within the dotted-OD, which is increased about 28.2% of a dotOD46 device as compared with the traditional nLDMOS. Furthermore, as adding an FODs structure combined with a uniform dotted-OD structure in the drain side will be haven a high ESD capability (about 5.9% increasing) and high LU immunity (25.8% increasing) compared with the traditional nLDMOS DUT. Therefore, it is good both for ESD and Latch-Up (LU) reliability considerations.

Keywords:

Electrostatic Discharge (ESD), Field-Oxide Device (FOD), holding Voltage (V_h), n-channel Lateral- Diffused MOSFET (LDMOS), Oxide Definition (OD), secondary breakdown current (I_t2), trigger Voltage (V_t1),

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