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Abstract
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Article Information:
Study on Nano Silicon Oxide Growth in Argon Media
S.A. Babanejad, F. Ashrafi, A. Bahary and M. Norouzi
Corresponding Author: Fereydoun Ashrafi
Submitted: 2010 May, 19
Accepted: 2010 June, 14
Published: 2010 September, 10 |
Abstract:
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When an ultra thin Silicon oxide film will been grown thermally on Si substrate, the clean oxide film
could not be grown because of native oxide on the substrate and impurities such as carbon. Therefore some
methods and experiments have been performed for grow ing SiO2 on Si (111) in presence and in absence of Ar
gas at high pressure and high temperature. Experiments show that clean and amorphous nano oxide film could
be formed at Ar media. Moreover, the film structures have been studied by using AES (Auger Electron
Spectroscopy) and SEM (Scanning Electron Microscopy) techniques.
Key words: AES, Amorphous nano oxide, thin film, SEM technique, silicon oxide, ,
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Cite this Reference:
S.A. Babanejad, F. Ashrafi, A. Bahary and M. Norouzi, . Study on Nano Silicon Oxide Growth in Argon Media. Research Journal of Applied Sciences, Engineering and Technology, (6): Page No: 508-511.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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