Research Article | OPEN ACCESS
Design of a High Linearity 6-GHz Class-F Radio Frequency Power Amplifier
Abdulkareem Mokif Obais
Department of Electrical Engineering, University of Babylon, Babylon, Iraq
Research Journal of Applied Sciences, Engineering and Technology 2016 12:1204-1211
Received: December 30, 2015 | Accepted: March 1, 2016 | Published: June 15, 2016
Abstract
In this study, a high linearity class-F RF power amplifier is introduced. It is designed to operate at a frequency of 6 GHz with a bandwidth of 400MHz. The amplifier mixes between the characteristics of conventional switch mode class-F and class B amplifiers. It is biased at very low quiescent power, thus it dissipates negligible DC power in the absence of RF excitation. This makes it suitable for handset applications. The amplifier is designed and tested on Microwave Office Environments. It showed linear input/output characteristics for an input RF power range of -20 to 5d Bm. The amplifier collector efficiency is 80%, which is greater than that of ideal class-B power amplifier. In addition, it is sensitive to amplify low level RF signals, therefore it needs no preamplifier.
Keywords:
Amplifier linearization, class-F amplifier, RF Power amplifier , switching amplifier,
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Competing interests
The authors have no competing interests.
Open Access Policy
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Copyright
The authors have no competing interests.
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