Research Article | OPEN ACCESS
Study of Structural and Optical Properties of Undoped and Cd Doped SnO2 Thin Films Prepared by Sol-Gel Dip Coating Technique
1, 2M. Khechba, 1A. Bouabellou, 3F. Hanini and 1S. Touati
1Department of Physics, University Freres Mentouri Constantine, Thin Films and Interfaces Laboratory, Route Ain El Bey, Constantine 25000
2Department of Materials Sciences, Faculty of Nature and Life Sciences, University Larbi
Tebessi Tebessa, Constantine Road, Tebessa 12002, Algeria
3Department of Materials Sciences, Applied and Theoretical Physics Laboratory, University Larbi Tebessi Tébessa, Constantine Road, Tebessa 12002, Algeria
Research Journal of Applied Sciences, Engineering and Technology 2017 11:427-432
Received: January 25, 2016 | Accepted: April 22, 2016 | Published: November 15, 2017
Abstract
In this study, we report the study of the surface morphology, the structural and optical proprieties of transparent cadmium doped tin dioxide (Cd:SnO2) thin films deposited on glass and Si(100) substrates by Sol Gel Dip Coating (SGDC) technique. The analysis was carried out using Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), UV-Vis spectrophotometry and Spectroscopic Ellipsometry (SE). The X-ray diffraction reveals that all films deposited on Si(100) substrate have tetragonal crystalline structure with preferential orientation along (310) plane, but an amorphous structure is obtained for all the films prepared on glass substrate. The surface roughness, observed by means of AFM varies from 19 to 4 nm. The optical measurements show that the deposited Cd:SnO2 films have a high transparency (~86%) in the visible spectrum and a band gap energy decreasing from 3.60 eV to 3.31 eV with increasing Cd concentration. The obtained values of the refractive index of the films are ranging between 1.559 and 1.613.
Keywords:
AFM, Cd: SnO2, thin films, SE, Sol-gel, TCO, XRD, UV-vis,
References
- Bagheri-Mohagheghi, M.M. and M. Shokooh-Saremi, 2004. The influence of Al doping on the electrical, optical and structural properties of SnO2 transparent conducting films deposited by the spray pyrolysis technique. J. Phys. D. Appl. Phys., 37(8): 1248-1253.
CrossRef
-
Bhat, J.S., K.I. Maddani, A.M. Karguppikar and S. Ganesh, 2007. Electron beam radiation effects on electrical and optical properties of pure and aluminum doped tin oxide films. Nucl. Instrum. Meth. Phys. Res. B., 258(2): 369-374.
CrossRef
- Chen, Z.W., J.K.L. Lai, C.H. Shek and H. Chen, 2003. Synthesis and structural characterization of rutile SnO2 nanocrystals. J. Mater. Res., 18(6): 1289-1292.
CrossRef
- Chen, Z.W., J.K.L. Lai and C.H. Shek, 2004. Insights into microstructural evolution from nanocrystalline SnO2 thin films prepared by pulsed laser deposition. Phys. Rev. B., 70: 165314.
CrossRef
- Chen, Z.W., J.K.L. Lai, C.H. Shek and H.D. Chen, 2005. Nucleation and growth of SnO2 nanocrystallites prepared by pulsed laser deposition. Appl. Phys. A., 81(5): 959-962.
CrossRef
-
Chen, Z.W., J.K.L. Lai and C.H. Shek, 2006. Mystery of porous SnO2 thin film formation by pulsed delivery. Chem. Phys. Lett., 422(1-3): 1-5.
CrossRef
- Cioffi, N., L. Traversa, N. Ditaranto, A.M. Taurino, M. Epifani, P. Siciliano, T. Bleve-Zacheo, L. Sabbatini, L. Torsi and P.G. Zambonin, 2006. Core-shell Pd nanoparticles embedded in SnOX films. Synthesis, analytical characterisation and perspective application in chemiresistor-type sensing devices. Microelectr. J., 37(12): 1620-1628.
CrossRef
- Durrani, S.M.A., E.E. Khawaja and M.F. Al-Kuhaili, 2005. CO-sensing properties of undoped and doped tin oxide thin films prepared by electron beam evaporation. Talanta, 65(5): 1162-1167.
CrossRef PMid:18969926
- Fang, T.H. and W.J. Chang, 2005. Nanomechanical characteristics of SnO2:F thin films deposited by chemical vapor deposition. Appl. Surf. Sci., 252(5): 1863-1869.
CrossRef
- Ginley, D.S. and C. Bright, 2000. Transparent conducting oxides. MRS. Bull., 25(8): 15-18.
CrossRef
-
Jin, C., T. Yamazaki, K. Ito, T. Kikuta and N. Nakatani, 2006. H2S sensing property of porous SnO2 sputtered films coated with various doping films. Vacuum, 80(7): 723-725.
CrossRef
- Kim, T.Y., J.W. Lee, W.S. Park, S.K. Park, K.Y. Kim and I.B. Kang, 2010. Development of transparent conductive oxide for thin-film silicon solar cells. J. Korean Phys. Soc., 56(2): 571-575.
CrossRef
- Kuo, C.G., C.Y. Chou, Y.C. Tung and J.H. Chen, 2012. Experimental study of the electrochromic properties of WO3 thin films derived by electrochemical method. J. Mar. Sci. Technol., 20(4): 365-368.
Direct Link
- Manjula, P., L. Satyanarayana, Y. Swarnalatha and S.V. Manorama, 2009. Raman and MASNMR studies to support the mechanism of low temperature hydrogen sensing by Pd doped mesoporous SnO2. Sensor. Actuat. B-Chem., 138(1): 28-34.
Direct Link
- Mariappan, R., V. Ponnuswamy, P. Suresh, R. Suresh, M. Ragavendar and C. Sankar, 2013. Deposition and characterization of pure and Cd doped SnO2 thin films by the nebulizer spray pyrolysis (NSP) technique. Mat. Sci. Semicon. Proc., 16(3): 825-832.
CrossRef
-
McDowell, M.G., R.J. Sanderson and I.G. Hill, 2008. Combinatorial study of zinc tin oxide thin-film transistors. Appl. Phys. Lett., 92: 013502.
CrossRef
-
Minami, T., 2000. New n-type transparent conducting oxides. MRS. Bull., 25(8): 38-44.
CrossRef
-
Patil, L.A. and D.R. Patil, 2006. Heterocontact type CuO-modified SnO2 sensor for the detection of a ppm level H2S gas at room temperature. Sensor. Actuat. B-Chem., 120(1): 316-323.
Direct Link
- Pavelko, R.G., A.A. Vasiliev, E. Llobet, X. Vilanova, N. Barrabés, F. Medina and V.G. Sevastyanov, 2009. Comparative study of nanocrystalline SnO2 materials for gas sensor application: Thermal stability and catalytic activity. Sensor. Actuat. B-Chem., 137(2): 637-643.
CrossRef
- Pejova, B. and I. Grozdanov, 2007. Chemical synthesis, structural and optical properties of quantum sized semiconducting tin(II) selenide in thin film form. Thin Solid Films, 515(13): 5203-5211.
CrossRef
- Ramamoorthy, K., C. Sanjeeviraja, M. Jayachandran, K. Sankaranarayanan, P. Misra and L.M. Kukreja, 2006. Development of a novel high optical quality ZnO thin films by PLD for III-V opto-electronic devices. Cur. Appl. Phys., 6(1): 103-108.
CrossRef
-
Samotaev, N.N., A.A. Vasiliev, B.I. Podlepetsky, A.V. Sokolov and A.V. Pisliakov, 2007. The mechanism of the formation of selective response of semiconductor gas sensor in mixture of CH4/H2/CO with air. Sensor. Actuat. B-Chem., 127(1): 242-247.
CrossRef
-
Shen, Y., T. Yamazaki, Z. Liu, D. Meng, T. Kikuta, N. Nakatani, M. Saito and M. Mori, 2009. Microstructure and H2 gas sensing properties of undoped and Pd-doped SnO2 nanowires. Sensor. Actuat. B-Chem., 135(2): 524-529.
Direct Link
-
Shimizu, Y., E. Kanazawa, Y. Takao and M. Egashira, 1998. Modification of H2-sensitive breakdown voltages of SnO2 varistors with noble metals. Sensor. Actuat. B-Chem., 52(1-2): 38-44.
Direct Link
-
Shukla, S., P. Zhang, H.J. Cho, S. Seal and L. Ludwig, 2007. Room temperature hydrogen response kinetics of nano-micro-integrated doped tin oxide sensor. Sensor. Actuat. B-Chem., 120(2): 573-583.
Direct Link
- Shuping, G., X. Jing, L. Jianqiao and Z. Dongxiang, 2008. Highly sensitive SnO2 thin film with low operating temperature prepared by sol-gel technique. Sensor. Actuat. B-Chem., 134: 57-61.
Direct Link
- Tauc, J., 1974. Amorphous and liquid semiconductors. Plenum Press, London.
CrossRef
- Thangaraju, B., 2002. Structural and electrical studies on highly conducting spray deposited fluorine and antimony doped SnO2 thin films from SnCl2 precursor. Thin Solid Films, 402(1-2): 71-78.
CrossRef
-
Vasiliev, R.B., M.N. Rumyantseva, N.V. Yakovlev and A.M. Gaskov, 1998. CuO-SnO2 element for highly sensitive and selective detection of H2S. Sensor. Actuat. B-Chem., 50: 186-193.
- Yamazoe, N., J. Tamaki and N. Miura, 1996. Role of hetero-junctions in oxide semiconductor gas sensors. Mater. Sci. Eng. B-Adv., 41(1): 178-181.
Direct Link
-
Young, D.L., H. Moutinho, Y. Yan and T.J. Coutts, 2003. Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, Zn2 SnO4, thin films. J. Appl. Phys., 92(1): 310-319.
CrossRef
Competing interests
The authors have no competing interests.
Open Access Policy
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Copyright
The authors have no competing interests.
|
|
|
ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
|
Information |
|
|
|
Sales & Services |
|
|
|