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     Research Journal of Applied Sciences, Engineering and Technology


Optimization of the Electrical Characteristics of Cadmium Telluride Based Thin Layer Solar Cell According to Thickness and Gap Energy

1El Hadji Ndiouga Ndiaye, 2, 3Serigne Massamba Seck, 3Modou Fall and 2Stephane Charvet
1Departement de Physique, UFR SATIC, Universite Alioune Diop de Bambey Senegal
2Laboratoire de Physique de la Matiere Condensee (LPMC), Universite de Picardie Jules Verne, Chemin du Thil - CS 52501 - 80025 Amiens Cedex 1
3Laboratoire de Chimie Physique Organique et d'Analyses Environnementales (LCPOAE), Université Cheikh Anta Diop, BP 5005 Dakar‐Fann, Dakar
Research Journal of Applied Sciences, Engineering and Technology  2020  4:129-135
http://dx.doi.org/10.19026/rjaset.17.5821  |  © The Author(s) 2020
Received: March 13, 2020  |  Accepted: April 30 2020  |  Published: August 25, 2020

Abstract

In the quest for better photovoltaic performance, we simulated the CdTe-based thin film solar cell in ITO/CdS/CdTe/Mo structure with SCAPS (Solar Cell Capacitance Simulator). SCAPS model makes possible to study the effect of the thickness of layers and the gap energy (Eg) of each layer (CdTe, CdS and ITO) on the electrical characteristics of outputs such as open-circuit voltage (Voc), short-circuit current density (Jsc), Form Factor (FF) and efficiency (&eta) of the cell. The results of the simulations were in good agreement with those of the literature and revealed that increasing the thickness of the ITO window layer and of the CdS buffer cell layer reduces the photovoltaic efficiency. Conversely, the conversion rate increases with the thickness of the CdTe absorbent layer. The optimized values of layer thicknesses and energy gap of the absorber layer of the CdTe solar cell provide good photovoltaic performance with an optimal efficiency of 22%.

Keywords:

CdTe, gap energy, layer thickness, performances, SCAPS, simulation,


References


Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.

ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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