Research Article | OPEN ACCESS
Enhanced Light Extraction from a GaN-based Light Emitting Diode with Triangle Grating Structure
Li Cheng
Beijing University of Technology, Beijing 100124, China
Research Journal of Applied Sciences, Engineering and Technology 2013 24:5608-5613
Received: October 17, 2012 | Accepted: November 23, 2012 | Published: May 30, 2013
Abstract
We propose a simple method to improve the light extraction in GaN based light emitting diode. Conventional light emitting diode has an extraction limitation due to the total internal reflection which occurs at the interface between GaN and air. By using periodic grating etched at the GaN layer, we can couple more emitting light out of the active layer. Tapering the grating structure would facilitate the impedance matching between GaN light emitting diode and air, which can enhance broadband light extraction. We use finite difference time domain method to numerically find the best tapering grating structure. The numerical experiment demonstrate an enhance factor 4 of our proposed structure compared with the conventional one over broad band specctrum.
Keywords:
Grating, LED, impedance matching,
Competing interests
The authors have no competing interests.
Open Access Policy
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Copyright
The authors have no competing interests.
|
|
![](http://www.maxwellsci.com/images/RJASET-maxw.jpg) |
ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
![Submit Manuscript](../images/sub.jpg) |
Information |
|
|
|
Sales & Services |
|
|
|