Abstract

In this study, a minimum set of low-power digital standard cells for low-leakage applications are developed and introduced into SMIC (Semiconductor Manufacturing International Corporation) 130 nm CMOS libraries, which include basic logic gates such as inverter, NAND, NOR, XOR, XNOR and flip-flop. The inverter, NAND, NOR and flip-flop standard cells based on the gate-length biasing technique are proposed to achieve low Energy Delay Product (EDP). The XOR and XNOR standard cells are optimized based on transistor-level. All circuits are simulated with HSPICE at a SMIC 130nm CMOS technology by a 1.2V supply voltage. The proposed several standard cells attain large leakage reductions. A mode-10 counter is verified with the proposed standard cells by using commercial EDA tools. The leakage and total dynamic power dissipations of the mode-10 counter using the proposed standard cells provide a reduction of 21.27 and 3.06%, respectively. The results indicate the proposed standard cells are a good choose in low leakage applications.

Keywords:

Digital standard cells, gate-length biasing techniques integrated circuits, low-leakage designs,

References

Competing interests

The authors have no competing interests.

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Copyright

The authors have no competing interests.