Research Article | OPEN ACCESS
Comparing AlGaAs-GaAs Heterojunction Materials with CdS-InP Anisotype for Solar Cells Efficiency in Concentrator Systems
1Tina Sojoudi, 2Nardin Avishan, 2Sanam Khalili, 1Mohammad Karimi and 3Ronak Khosravi
1Young Researchers Club, Parsabad Moghan Branch, Islamic Azad University, Parsabad Moghan, Iran
2Young Researchers Club, Tabriz Branch, Islamic Azad University, Tabriz, Iran
3Department of Electrical Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran
Research Journal of Applied Sciences, Engineering and Technology 2013 6:1923-1927
Received: June 08, 2012 | Accepted: August 08, 2012 | Published: February 21, 2013
Abstract
In this study, a research was conducted for comparisons between Hetero Junction (HJ) solar cells and anis type materials. The material Al0.25Ga0.75As/GaAs is discussed as an example of such a structure and on the other hand the Cd0.25 S0.75-InP anis type as an example of the solar cells is considered as an example of an anis type in which the properties of low lattice mismatch appear as an advantageous for junction transport. Finally all common junctions are experimented and results show the best efficiency for each with real amounts.
Keywords:
Anis type, efficiency, hetero face, hetero junctions, solar cells,
Competing interests
The authors have no competing interests.
Open Access Policy
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Copyright
The authors have no competing interests.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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