Abstract

The aim of this study is studying the influence of the donor concentration and temperature on the static dielectric constant $(ε_s)$ of heavily doped n-type InAs semiconductor. The variation of donor concentration caused an exponential increase of $ε_s$ at high values of donor density. Our calculations indicated that $ε_s$ has no meaning at concentration above $3×10^{16} cm^3$ . Above this value the static dielectric constant diverges so that the polarization catastrophe occurred. The static dielectric constant dependence of resistivity shows that at high resistivity the static dielectric constant appears to be nearly constant and equals the value 􏲅􏱳$ε_s = 14.5$. This value is equal to the static dielectric constant of InAs host semiconductor without doping. One can expect a divergence of 􏲅􏱳 at very low resistivity values at which polarization catastrophe can happen.

Keywords:

Heavily doped InAs, polarization catastrophe, static dielectric constant,

References

Competing interests

The authors have no competing interests.

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The authors have no competing interests.