Research Article | OPEN ACCESS
Comparative Study of 1.3 and 1.5 m Light-Emitting Diodes GaAs-Based InAs/InGaAs and InAs/(Ga, In) (N, As) Self-Assembled Quantum Dots
1O.A. Niasse, 1B. Ba, 1A. Ndiaye, 1F. Mbaye, 1A. Lo, 2A. Beye and 3O. Tottereau
1Laboratoire des Semi-conducteurs et d'Energie Solaire, Faculte des Sciences et Techniques,
Universite Cheikh Anta Diop de Dakar, BP: 5005, Senegal
2Groupe de Physique des Materiaux, Departement de Physique, Faculte des Sciences et Techniques, Universite Cheikh Anta Diop, BP: 5005, Dakar, Senegal
3Centre de Recherche sur l'Hetero-epitaxie et ses Applications du CNRS, 06560, Valbonne, France
Research Journal of Applied Sciences, Engineering and Technology 2013 1:30-36
Received: December 20, 2011 | Accepted: June 08, 2012 | Published: January 01, 2013
Abstract
This study presents self-assembled quantum dots structures made on GaAs substrate. The samples were grown by Molecular Beam Epitaxy (MBE) in the Stranski-Krastanow (SK) growth mode. Two types of quantum dots structures are performed under different growth conditions and are compared: the first type is composed of two structures with InAs quantum dots encapsulated with (Ga, In) (N, As) and the second one with boxes wrapped with InGaAs. The influence of encapsulation of quantum dots is highlighted and as already shown, the redshift of emission wavelength depends on nitrogen doping. Further investigations are done through the incorporation of indium and nitrogen in the quantum dots structures in order to understand their optimal doping level on electrical and optical properties. The effects of temperature, an important growth parameter, are examined through images of nanostructures obtained by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM) techniques.
Keywords:
Dislocations, epitaxy, Molecular Beam Epitaxy (MBE), photoluminescence, quantum dots, RHEED, Scanning Electronic Microscopy (SEM),
Competing interests
The authors have no competing interests.
Open Access Policy
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Copyright
The authors have no competing interests.
|
|
![](http://www.maxwellsci.com/images/RJASET-maxw.jpg) |
ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
![Submit Manuscript](../images/sub.jpg) |
Information |
|
|
|
Sales & Services |
|
|
|