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     Research Journal of Applied Sciences, Engineering and Technology


Investigating a Hypothetical Semiconductor Laser Bar with a Damaged Single Emitter Using a Laser Diode Simulation/Emulation Tool

1, 2C.K. Amuzuvi and 1J.C. Attachie
1Department of Electrical and Electronic Engineering, University of Mines and Technology, Tarkwa, Ghana
2Photonic and Radio Frequency Engineering Group (PRFEG), Electrical Systems and Optics Research Division, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
Research Journal of Applied Sciences, Engineering and Technology  2014  8:1598-1602
http://dx.doi.org/10.19026/rjaset.7.437  |  © The Author(s) 2014
Received: May 21, 2013  |  Accepted: June 12, 2013  |  Published: February 27, 2014

Abstract

This study demonstrates the use of Barlase, a semiconductor laser diode emulation tool, to emulate the by-emitter degradation of high power semiconductor laser diodes. Barlase is software that uses a LabView control interface. In this study, a hypothetical laser diode bar (multiple emitters) was used to investigate a damaged single emitter randomly located in the bar and its behavior analyzed within the bar. It should however, be noted that, this scenario is valid for devices at the start of the aging process only. When all other relevant effects that affect the performance of laser diodes bars are allowed to interact over time, high levels of defects can also play important role in the degradation process. The results of this simulation scenario show the successful implementation of Barlase in the by-emitter analysis of laser diodes.

Keywords:

Band gap energy, by-emitter, defect, degradation, emitter, nonradiative recombination, quantum well, slope efficiency, temperature, threshold current,


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Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.

ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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