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     Research Journal of Applied Sciences, Engineering and Technology


Influence of Temperature on the Electrical Parameters of a Vertical Parallel Junction Silicon Solar Cell under Polychromatic Illumination in Steady State

1Nfally Dieme, 2Martial Zoungrana, 3Senghane Mbodji, 4Hawa Ly Diallo, 1Mor Ndiaye, 1Fabe Idrissa Barro and 1Gregoire Sissoko
1Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar, Senegal
2Laboratory of Materials and Environment, UFR/SEA, University of Ouagadougou, Burkina Faso
3University of Bambey, UFR SATIC, UBI, Physics Section, Bambey, Senegal
4University of Thies, UFR SET, Thies, Senegal
Research Journal of Applied Sciences, Engineering and Technology  2014  12:2559-2562
http://dx.doi.org/10.19026/rjaset.7.567  |  © The Author(s) 2014
Received: August 24, 2013  |  Accepted: September 03, 2013  |  Published: March 29, 2014

Abstract

This study presents a theoretical study of a vertical parallel junction solar cell under multispectral illumination in steady state. Based on the diffusion equation, the excess minority carrier’s density is expressed and both photocurrent density and photovoltage are determined. For all these parameters we showed the effect of external temperature with respect to the operating point of the solar cell through the junction recombination velocity.

Keywords:

Photocurrent, photovoltage, solar cell, temperature, vertical junction,


References

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Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.

ISSN (Online):  2040-7467
ISSN (Print):   2040-7459
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