Abstract

A study of technological parameters of growing of SiGe like number of Ge nano layers, layers thickness and temperature of substrate are reported. These parameters play an important role in the optical properties of SiGe nanostructures with Ge quantum dots. A long lifetime of radiative recombination for band-to-band transition is attributed to indirect band in Si. As a consequence, the dominant recombination at deep level defects is non-radiative. In order to enhance the intensity of luminescence band at 0.8 eV that related to radiative recombination of Ge quantum dots, the hydrogen plasma ion treatment of SiGe nanostructure were utilized. Improving of the luminescence intensity is an important parameter to increase the quantum efficiency of optoelectronic devices based on the Si nano layer with Ge quantum dots.

Keywords:

Ge quantum dots (QD), internal strain, photoluminescence, SiGe nanostructure,

References

Competing interests

The authors have no competing interests.

Open Access Policy

This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Copyright

The authors have no competing interests.