Research Article | OPEN ACCESS
A Comparative Study on SOI MOSFETs for Low Power Applications
Khairul Affendi Rosli, Raja Mohd. Noor Hafizi Raja Daud, Md. Mamun and Mohammad Arif Sobhan Bhuiyan
Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, 43600, Bangi, Malaysia
Research Journal of Applied Sciences, Engineering and Technology 2013 8:2586-2591
Received: August 09, 2012 | Accepted: September 03, 2012 | Published: March 15, 2013
Abstract
Silicon on Insulator (SOI) technology has become one of the most promising technologies in semiconductor fabrication industry for its numerous advantages. This study presents merits and demerits of different SOIs presented in literatures and a comparative study is done based on several design and performance issues for low power applications. From the study it is found that Fully Depleted SOI MOSFET (FDSOI) technology is preferred due to its thin size, reduced leakage current and improved power consumption characteristics etc. compared to those of PDSOI and bulk silicon technology.
Keywords:
FDSOI, Low power, MOSFET, PDSOI, SOI,
Competing interests
The authors have no competing interests.
Open Access Policy
This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Copyright
The authors have no competing interests.
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ISSN (Online): 2040-7467
ISSN (Print): 2040-7459 |
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